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2 edition of kinetics of the chlorination of copper in the thin film range found in the catalog.

kinetics of the chlorination of copper in the thin film range

Le Minh Hieu

kinetics of the chlorination of copper in the thin film range

by Le Minh Hieu

  • 212 Want to read
  • 8 Currently reading

Published .
Written in English

    Subjects:
  • Copper -- Metallurgy.

  • Edition Notes

    Statementby Le Minh Hieu.
    The Physical Object
    Pagination79 leaves, bound :
    Number of Pages79
    ID Numbers
    Open LibraryOL14231422M

    The Growth and Characterization of Copper Sulphide Thin Film Using CBD (Chemical Bath Deposition) Technique Experimental Observation The dried samples were annealed at different temperatures. The details of various reaction bath and their dip times are displayed below in Table 1. Post deposition annealing at temperature greater than ºC. SYNERGISTIC STUDY ON ELECTROCHEMICALLY DEPOSITED THIN FILM WITH A SPECTRUM FROM MICRO TO NANO RANGE STRUCTURES A thesis submitted in partial .

    The iron displaces copper from its salt, to make iron sulfate solution and deposit a thin coating of metallic copper on the surface of the metal. Copper is quite an unreactive element, so plenty of metals will perform this trick with copper sulfate - zinc for instance, or aluminium - yet a simple iron nail is perhaps the most satisfying. A typical increase of % (visible range) and % (near infrared range) in the optical absorbance is obtained under optimal DPLC conditions and a band-gap shrinkage (ΔE g) of the CIS thin film after DPLC leads to broader acceptance of solar spectrum of nm. The results from the Raman spectrum and photoluminescence (PL) of the thin films Cited by: 3.

      Copper oxide thin film being considered thin film in solar cells due to its photovoltaic properties as it have band gap eV [1]. In this study, Copper oxide thin film electrodeposited on copper substrate. Electrodeposition process is a cheap process as compared to Thermal Anodic, Chemical ionization, Reactive sputtering [2]. Abstract— The present paper discusses the optical and structural properties of copper doped tin oxide thin film prepared on a glass substrate by thermal evaporation technique at a pressure of Vacuum chamber 2x torr and at a temperature 32 0C to 38 C. The film was annealed at C for two by: 1.


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Kinetics of the chlorination of copper in the thin film range by Le Minh Hieu Download PDF EPUB FB2

OXIDATION KINETICS OF COPPER IN THE THIN FILM RANGE* P. KRISHNAMOORTHYf and S. SIRCAR t Investigations have been carried out on the thin film oxidation of Copper in the temperature range Both annealed and 25% cold deformed samples were by: 8. The only data available on the reaction kinetics about the scavenging of Cl is reported in a study of the chlorination of yttrium oxide over the temperature range of °C [55].

A global. Fig. 1 is a SEM micrograph, showing a typical example of the low temperature oxidation Table 1 Experimental test conditions to which bulk copper and as-de- posited thin copper films were exposed in dry air environments Specimen Time (min) Temperature Cu coupons As-deposited sput- 25, 50, 75,50,tered Cu film As Cited by: crowave heating accelerated the growth rate of copper sulfide thin ∗Electrochemical Society Active Member.

zE-mail: [email protected] films, resulting in thicker films at the same reaction time compared with the conventional CBD method. Moreover, Lu et al. investigated the growth study of Cu xS thin films by depositing CuS thin films by.

A detailed fundamental investigation of the oxidation of copper in the very thin film range at temperatures below 60°C has been carried out. The results have been analyzed on the basis of Mott and Cabrera's theory of oxidation.

Most of the earlier workers have tried to fit in the data in the integrated form of the equation which necessarily involves imposition of certain Cited by: The article investigates the influence of temperature, time, quantity of calcium chloride, and oxygen flow on the chlorination degree of copper(I)sulfide by calcium chloride in the presence of oxygen.

Scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) analysis were used to determine morphological changes occurring with the change of temperature and by: Film sheet resistance measurement was developed to obtain the oxidation kinetics of Cu thin films in the nanometer range.

Cu thin films with smooth. Optical Properties of Copper (I) Oxide Thin Films Synthesized by SILAR Technique They are usually prepared in the form of thin film and are used in opto-electrical devices such as solar cells, displays, opto-electrical interfaces and the Absorbance shows a little increase (wavelength range of nm) and then decreases with increase.

Thin-film copper dissolution and reaction kinetics were investigated by monitoring Cu2+, employing inductively coupled plasma–mass spectroscopy, and the oxidation states of copper on Si wafer surface, employ-ing X-ray photoelectron spectroscopy. It was determined that the reaction kinetics is first order with respect to both HF and oxygen.

KeyWords: Precipitation, Silver Chloride Thin Film, Photocatalytic, Dye, Photosensitivity 1. Introduction Silver chloride (AgCl) is a semiconductor material with band gap of around ~ ev [1,2].

Upon irradi-ated by near UVlight, electrons on the valence band would jump onto the conduction band, producing electron and hole pairs [3]. Fig. Cyclic voltammograms onto stainless steel substrate for copper sulfide thin film The electrodeposition of copper sulfide thin films was carried out at the deposition potential V/SCE and current density is 3 to 4 mA/cm 2, for various deposition times byFile Size: 1MB.

that the roughness of CuO thin film of thickness (nm) is (nm), the average grain size is (nm) and the root means square is (). temperature while t=nm Figure (4): AFM Images for copper oxide thin film of thickness(nm).

Optical measurements From the results obtained by using (UV-VIS). the copper and sulfur peaks should be nearly equal to one for higher deposition time. From the graph, it is noted that for deposition time of 20 min.

the atomic percentage of copper iswhile that of sulfur is Fig. 3 EDAX of CuS thin film Optical Study The Fig. 3 shows the variation of (αhν)2 versus hν. A chlorination process for treating metal sulfide flotation concentrates is described.

The process involves low temperature chlorination combined with sulfur chloride conversion and selective oxidation to produce nonferrous metal chlorides, elemental sulfur, and ferric oxide in a three-stage fluidized bed by: 3. Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits and more recently as substrates for the synthesis of graphene.

However, the Cited by: Kinetics of coal fly ash chlorination by phosgene Douglas John Adelman Iowa State University Follow this and additional works at: Part of theChemical Engineering Commons This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University.

OF COPPER INDIUM DISELENIDE-BASED THIN FILMS By Suku Kim May, Chair: Timothy J. Anderson Major Department: Chemical Engineering CuInSe2 (CIS)-based compound semiconductors are increasingly important absorber layer materials for thin film solar cells. A better understanding of the growth kinetics of.

functional materials with excellent properties. A new concept of thin film nanocomposite (TFN) has been proposed in which nanomaterials are incorporated into the thin film layer of TFC membranes via the in-situ interfacial polymerization for desalination (Fig ) (Jeong, Hoek et al.

Other work was also conducted on surface modification of. Optical and Electrical Properties of Chemical Bath Deposited Cobalt Sulphide Thin Films 63 3.

Results and Discussion Structural characterization The XRD pattern of the CoS thin films was recorded by using a powder X-ray diffractometer, with a diffraction angle between 20° and 70° and is shown in Figure 1. TheCited by: nature of thin film. The electrical resistivity at room temperature of the Cu2S thin film onto the glass substrate decreases from × 10−2 to 10× −3-cm as film thickness decreases from to nm which agrees with reported values3,7,8.

Variation of resistivity of as-deposited Cu2S thin film on glassCited by: 4. for gas sensing application. Besides, the sheet resistance of the CuO thin film that were deposited at V substrate bias voltage and 8sccm oxygen flow rate was near to Ω which is close to fully oxidized copper oxide thin film.

Lastly, a simple experimental setup was constructed to test the functionality of the CuO thin film as a gas : Jia Wei Low.Hypochlorous acid has been reported as the main oxidant agent responsible for the corrosion of copper plumbing systems in chlorinated water supplies.

However, there is little information about chlorine consumption kinetics in a combined system (i.e., with dissolved oxygen (DO) and free chlorine), as well as its complete mass balance within a copper pipe during : Ignacio T. Vargas, Javiera M. Anguita, Pablo A. Pastén, Gonzalo E.

Pizarro.Copper layers as thin as nm (about 3 monolayers) are electrically continuous and show the electrical resistivity predicted by a grain-boundary-scattering model for continuous films of that thickness.

3 nm thick copper films on 2 nm of ruthenium have a sheet resistance of less than 50 X/, a value low enough to.